advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 40v fast switching characteristic r ds(on) 25m low on-resistance i d 7.8a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice 1 AP9465GEM-HF halogen-free product 201408264 parameter rating drain-source voltage 40 gate-source voltage + 16 drain current 3 , v gs @ 10v 7.8 drain current 3 , v gs @ 10v 6.3 pulsed drain current 1 30 total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 thermal data parameter storage temperature range ap9465 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the so-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. s s s g d d d d so-8 s g d .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 40 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - - 25 m ? v gs =4.5v, i d =5a - - 32 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.8 - 2.5 v g fs forward transconductance v ds =5v, i d =7a - 15 - s i dss drain-source leakage current v ds =32v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 16v, v ds =0v - - + 30 ua q g total gate charge i d =7a - 8.5 14 nc q gs gate-source charge v ds =30v - 1.6 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4.1 - nc t d(on) turn-on delay time v ds =20v - 5.3 - ns t r rise time i d =1a - 6.7 - ns t d(off) turn-off delay time r g =3.3 - 20.5 - ns t f fall time v gs =10v - 4.5 - ns c iss input capacitance v gs =0v - 610 980 pf c oss output capacitance v ds =25v - 90 - pf c rss reverse transfer capacitance f=1.0mhz - 60 - pf r g gate resistance f=1.0mhz - 1.8 3.6 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2a, v gs =0v - - 1.2 v t rr reverse recovery time i s =7a, v gs =0 v , - 20 - ns q rr reverse recovery charge di/dt=100a/s - 14 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP9465GEM-HF 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 125 /w when mounted on min. copper pad. .
a p9465gem-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. on-resistance vs. reverse diode drain current 3 0 10 20 30 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 10 20 30 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 5.0v 4.5v v g =3.0v t a = 150 o c 10 30 50 70 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5a t a =25 o c 0.6 1.0 1.4 1.8 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =7a v g =10v 0 3 6 9 12 15 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 10.0 20.0 30.0 40.0 50.0 0 1020304050 i d , drain current (a) r ds(on) (m ) v gs =10v v gs =4.5v .
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 AP9465GEM-HF 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm t t 0.02 duty factor = t/t peak t j = p dm x r thja + t a r thja = 125 /w 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on) 0 2 4 6 8 10 12 0 5 10 15 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =7a v ds =20v v ds =25v v ds =30v 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss q v g 4.5v q gs q gd q g charge 0 10 20 30 40 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v .
AP9465GEM-HF marking information 5 9465gem ywwsss part numbe r date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only .
|
